? 2011 ixys corporation, all rights reserved IXYH50N120C3 v ces = 1200v i c110 = 50a v ce(sat) 3.0v t fi(typ) = 57ns ds100343(05/11) g = gate c = collector e = emitter tab = collector to-247 ad g c e tab high-speed igbt for 20-50 khz switching symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1200 v v ge(th) i c = 250 a, v ce = v ge 2.5 4.5 v i ces v ce = v ces , v ge = 0v 25 a t j = 125 c 250 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 50a, v ge = 15v, note 1 2.5 3.0 v t j = 125 c 3.2 v advance technical information symbol test conditions maximum ratings v ces t j = 25c to 150c 1200 v v cgr t j = 25c to 150c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 105 a i c110 t c = 110c 50 a i cm t c = 25c, 1ms 230 a i a t c = 25c 40 a e as t c = 25c 750 mj ssoa v ge = 15v, t vj = 125c, r g = 5 i cm = 100 a (rbsoa) clamped inductive load @v ce v ces p c t c = 25c 625 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g 1200v xpt tm igbt genx3 tm features z optimized for low switching losses z square rbsoa z positive thermal coefficient of vce(sat) z avalanche rated z high current handling capability z international standard package advantages z high power density z low gate drive requirement applications z high frequency power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts
ixys reserves the right to change limits, test conditions, and dimensions. IXYH50N120C3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . e ? p to-247 (ixyh) outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitter dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 40a, v ce = 10v, note 1 22 37 s c ie s 2770 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 195 pf c res 83 pf q g(on) 143 nc q ge i c = 50a, v ge = 15v, v ce = 0.5 ? v ces 17 nc q gc 60 nc t d(on) 24 ns t ri 50 ns e on 2.58 mj t d(off) 240 ns t fi 57 ns e of f 1.20 2.00 mj t d(on) 25 ns t ri 57 ns e on 5.14 mj t d(off) 274 ns t fi 98 ns e off 1.47 mj r thjc 0.20 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 40a, v ge = 15v v ce = 0.5 ? v ces , r g = 5 note 2 inductive load, t j = 125c i c = 40a, v ge = 15v v ce = 0.5 ? v ces , r g = 5 note 2
? 2011 ixys corporation, all rights reserved IXYH50N120C3 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 100 00.511.522.533.544.5 v ce - volts i c - amperes v ge = 15v 13v 11v 10v 9v 7v 8v 6v 5v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 10v 8v 11v 12v 6v 5v 9v 7v 13v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 v ce - volts i c - amperes 8v 7v 6v 5v v ge = 15v 13v 11v 10v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 50a i c = 25a i c = 100a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.5 2.5 3.5 4.5 5.5 6.5 7.5 56789101112131415 v ge - volts v ce - volts i c = 100 a t j = 25oc 50 a 25 a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 100 2.533.544.555.566.577.58 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYH50N120C3 fig. 7. transconductance 0 10 20 30 40 50 60 0 102030405060708090100 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 110 200 300 400 500 600 700 800 900 1000 1100 1200 v ce - volts i c - amperes t j = 125oc r g = 5 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20406080100120140 q g - nanocoulombs v ge - volts v ce = 600v i c = 50a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2011 ixys corporation, all rights reserved IXYH50N120C3 fig. 12. inductive switching energy loss vs. gate resistance 0 1 2 3 4 5 6 5 1015202530 r g - ohms e off - millijoules 0 4 8 12 16 20 24 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 15. inductive turn-off switching times vs. gate resistance 40 60 80 100 120 140 160 5 1015202530 r g - ohms t f i - nanoseconds 200 300 400 500 600 700 800 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 13. inductive switching energy loss vs. collector current 0 0.5 1 1.5 2 2.5 3 3.5 4 20 30 40 50 60 70 80 i c - amperes e off - millijoules 0 2 4 6 8 10 12 14 16 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 25 50 75 100 125 t j - degrees centigrade e off - millijoules 0 2 4 6 8 10 12 14 16 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 16. inductive turn-off switching times vs. collector current 0 20 40 60 80 100 120 140 160 180 20 30 40 50 60 70 80 i c - amperes t f i - nanoseconds 180 200 220 240 260 280 300 320 340 360 t d(off) - nanoseconds t f i t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 20 40 60 80 100 120 140 160 25 50 75 100 125 t j - degrees centigrade t f i - nanoseconds 180 200 220 240 260 280 300 320 t d ( off ) - nanoseconds t f i t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 600v i c = 80a i c = 40a
ixys reserves the right to change limits, test conditions, and dimensions. IXYH50N120C3 ixys ref: ixy_50n120c3(6n)05-12-11 fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 160 20 30 40 50 60 70 80 i c - amperes t r i - nanoseconds 18 20 22 24 26 28 30 32 34 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 600v t j = 25oc t j = 125oc fig. 20. inductive turn-on switching times vs. junction temperature 20 40 60 80 100 120 140 160 180 25 50 75 100 125 t j - degrees centigrade t r i - nanoseconds 20 22 24 26 28 30 32 34 36 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 18. inductive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 5 1015202530 r g - ohms t r i - nanoseconds 15 25 35 45 55 65 75 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 40a i c = 80a
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